Stepwise determination of metallic copper, cuprous oxide and cupric oxide
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چکیده
منابع مشابه
Cupric oxide inclusions in cuprous oxide crystals grown by the floating zone method
Phase-pure cuprous oxide (Cu2O) crystals are difficult to grow since cupric oxide can form within the crystal as the crystal is cooled to ambient conditions. Vacancies are the solute which causes precipitation of macroscopic defects. Therefore, even when a mostly phase-pure single crystal is used as a feed rod, cupric oxide inclusions persist in the recrystallized solid. Control of the thermal ...
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The efficiency of third-harmonic generation in cuprous oxide was measured. Intensities followed a noncubic power law that indicates nonperturbative behavior. Polarization anisotropy of the harmonic generation was demonstrated and related to the third-order susceptibility. The results will influence the understanding of harmonic generation in centrosymmetric materials and are potentially relevan...
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In the present work, cupric oxide (CuO) films were obtained through thermal annealing of the copper (Cu) films deposited on quartz substrates by DC magnetron sputtering method. The annealing was performed in air atmosphere for different times ranging from 60-240 min at temperature of 400 ºC. The influence of annealing times on structural and morphological properties of the films was investi...
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2 Gap and Reactivity of Cupric Oxide Nanosheets 3 Zachary S. Fishman,† Benjamin Rudshteyn,‡ Yulian He, Bolun Liu, Subhajyoti Chaudhuri,‡ 4 Mikhail Askerka,‡ Gary L. Haller,†,‡ Victor S. Batista,*,‡ and Lisa D. Pfefferle*,† 5 †Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06520-8286, United States 6 ‡Department of Chemistry and Energy Sciences Inst...
متن کاملElectronic Structure of Pure and Doped Cuprous Oxide with Copper Vacancies: Suppression of Trap States
Cuprous oxide (Cu2O) is an attractive material for solar energy applications, but its photoconductivity is limited by minority carrier recombination caused by native defect trap states. We examine the creation of trap states by cation vacancies, using first principles calculations based on density functional theory (DFT) to analyze the electronic structure and calculate formation energies. With...
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ژورنال
عنوان ژورنال: BUNSEKI KAGAKU
سال: 1979
ISSN: 0525-1931
DOI: 10.2116/bunsekikagaku.28.4_213